TW015Z120C,S1F Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED


：	TW015Z120C,S1F
：	Single FETs, MOSFETs
：	Toshiba Electronic Devices and Storage Corporation
：	G3 1200V SIC-MO
：	-
：	Tube
：	198
：	1

: 198

$61.3300

$53.8900

$1,616.7000

120

$50.1800

$6,021.6000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Toshiba Electronic Devices and Storage Corporation
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	175°C
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	21mOhm @ 50A, 18V
Power Dissipation (Max)	431W (Tc)
Vgs(th) (Max) @ Id	5V @ 11.7mA
Supplier Device Package	TO-247-4L(X)
Drive Voltage (Max Rds On, Min Rds On)	18V
Vgs (Max)	+25V, -10V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	158 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6000 pF @ 800 V

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