NXV08A170DB2 FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 100

$19.0900

$17.5400

$175.4000

$16.8200

$420.5000

$14.0900

$1,127.2000

288

$13.1800

$3,795.8400

576

$12.2700

$7,067.5200

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TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	12-PowerDIP Module (1.118", 28.40mm)
Mounting Type	Through Hole
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	175°C (TJ)
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	200A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	14000pF @ 40V
Rds On (Max) @ Id, Vgs	0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	APM12-CBA
Grade	Automotive
Qualification	AEC-Q100

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