NXH004P120M3F2PTNG FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 100

$215.4900

$201.8400

$4,036.8000

$194.2500

$7,770.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tray
Product Status	ACTIVE
Package / Case	Module
Mounting Type	Chassis Mount
Configuration	2 N-Channel (Half Bridge)
Operating Temperature	-40°C ~ 175°C (TJ)
Technology	Silicon Carbide (SiC)
Power - Max	1.1kW (Tj)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds	16410pF @ 800V
Rds On (Max) @ Id, Vgs	5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs	876nC @ 20V
Vgs(th) (Max) @ Id	4.4V @ 120mA
Supplier Device Package	36-PIM (56.7x62.8)

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