IV1Q12050T3 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

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Product parameters

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TYPE	DESCRIPTION
Mfr	Inventchip Technology
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-3
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiCFET (Silicon Carbide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	58A (Tc)
Rds On (Max) @ Id, Vgs	65mOhm @ 20A, 20V
Power Dissipation (Max)	327W (Tc)
Vgs(th) (Max) @ Id	3.2V @ 6mA
Supplier Device Package	TO-247-3
Drive Voltage (Max Rds On, Min Rds On)	20V
Vgs (Max)	+20V, -5V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	120 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	2770 pF @ 800 V

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