GT095N04D5 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 80100

5000

$0.1700

$850.0000

15000

$0.1600

$2,400.0000

30000

$0.1400

$4,200.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	Goford Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerTDFN
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	54A (Tc)
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Power Dissipation (Max)	29.8W (Tc)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	942 pF @ 20 V

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