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TP90H050WS

  •  TP90H050WS
  • image of Single FETs, MOSFETs TP90H050WS
Part number TP90H050WS
Product Category Single FETs, MOSFETs
Manufacturer Transphorm
Description GANFET N-CH 900
Encapsulation -
Packaging Tube
Quantity 207
RoHS Status
IN STOCK: 207
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Product parameters
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TYPEDESCRIPTION
MfrTransphorm
Series-
PackageTube
Product StatusOBSOLETE
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C
TechnologyGaNFET (Cascode Gallium Nitride FET)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C34A (Tc)
Rds On (Max) @ Id, Vgs63mOhm @ 22A, 10V
Power Dissipation (Max)119W (Tc)
Vgs(th) (Max) @ Id4.4V @ 700µA
Supplier Device PackageTO-247-3
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)900 V
Gate Charge (Qg) (Max) @ Vgs17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds980 pF @ 600 V
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