NTJD4105CT2G FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 4860

$0.4200

$0.3300

$3.3000

100

$0.2000

$20.0000

500

$0.1800

$90.0000

1000

$0.1200

$120.0000

3000

$0.1100

$330.0000

6000

$0.1100

$660.0000

9000

$0.1000

$900.0000

30000

$0.1000

$3,000.0000

75000

$0.0900

$6,750.0000

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TYPE	DESCRIPTION
Mfr	Sanyo Semiconductor/onsemi
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	6-TSSOP, SC-88, SOT-363
Mounting Type	Surface Mount
Configuration	N and P-Channel
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	270mW
Drain to Source Voltage (Vdss)	20V, 8V
Current - Continuous Drain (Id) @ 25°C	630mA, 775mA
Input Capacitance (Ciss) (Max) @ Vds	46pF @ 20V
Rds On (Max) @ Id, Vgs	375mOhm @ 630mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs	3nC @ 4.5V
FET Feature	Logic Level Gate
Vgs(th) (Max) @ Id	1.5V @ 250µA
Supplier Device Package	SC-88/SC70-6/SOT-363

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