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MUN5130DW1T1G

  •  MUN5130DW1T1G
  •  MUN5130DW1T1G
  • image of Bipolar Transistor Arrays, Pre-Biased MUN5130DW1T1G
  • image of Bipolar Transistor Arrays, Pre-Biased MUN5130DW1T1G
MUN5130DW1T1G
Bipolar Transistor Arrays, Pre-Biased
Sanyo Semiconductor/onsemi
TRANS PREBIAS 2
-
Tape & Reel (TR)
9100
1
: 9100

1

$0.3200

$0.3200

10

$0.2200

$2.2000

100

$0.1100

$11.0000

500

$0.0900

$45.0000

1000

$0.0600

$60.0000

3000

$0.0500

$150.0000

6000

$0.0500

$300.0000

9000

$0.0400

$360.0000

30000

$0.0400

$1,200.0000

75000

$0.0400

$3,000.0000

150000

$0.0300

$4,500.0000

Obtain quotation information
MUN5130DW1T1
威伦-Willas
Digital Transistors
MUN5130DW1T1G
嘉兴南电-JXND
Digital transistors
LMUN5130DW1T1G
乐山无线电-LRC
数字三极管
Product parameters
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TYPEDESCRIPTION
MfrSanyo Semiconductor/onsemi
Series-
PackageTape & Reel (TR)
Product StatusACTIVE
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Transistor Type2 PNP - Pre-Biased (Dual)
Power - Max250mW
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce3 @ 5mA, 10V
Resistor - Base (R1)1kOhms
Resistor - Emitter Base (R2)1kOhms
Supplier Device PackageSC-88/SC70-6/SOT-363
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