HT8KC6TB1 FET, MOSFET Arrays_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 100

$1.5100

$1.3500

$13.5000

$1.2800

$32.0000

100

$1.0500

$105.0000

250

$0.9900

$247.5000

500

$0.8700

$435.0000

1000

$0.6900

$690.0000

3000

$0.6400

$1,920.0000

6000

$0.6100

$3,660.0000

15000

$0.5900

$8,850.0000

Obtain quotation information

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	ROHM Semiconductor
Series	-
Package	Tape & Reel (TR)
Product Status	ACTIVE
Package / Case	8-PowerVDFN
Mounting Type	Surface Mount
Configuration	2 N-Channel
Operating Temperature	150°C (TJ)
Technology	MOSFET (Metal Oxide)
Power - Max	2W (Ta), 14W (Tc)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6.5A (Ta), 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds	460pF @ 30V
Rds On (Max) @ Id, Vgs	29mOhm @ 6.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	7.6nC @ 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSMT (3.2x3)

关闭

Inquiry