FBG20N04ASH Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED_ Independent Distributor

+86-13723477211

sales@fuchaoic.com

FBG20N04ASH


：	FBG20N04ASH
：	Single FETs, MOSFETs
：	EPC Space
：	GAN FET HEMT 20
：	-
：	Bulk
：	125
：

: 125

1

$392.7500

$392.7500

10

$377.9900

$3,779.9000

Obtain quotation information

Product parameters

PDF(1)

TYPE	DESCRIPTION
Mfr	EPC Space
Series	e-GaN®
Package	Bulk
Product Status	ACTIVE
Package / Case	4-SMD, No Lead
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	GaNFET (Gallium Nitride)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Rds On (Max) @ Id, Vgs	130mOhm @ 4A, 5V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Supplier Device Package	4-SMD
Drive Voltage (Max Rds On, Min Rds On)	5V
Vgs (Max)	+6V, -4V
Drain to Source Voltage (Vdss)	200 V
Gate Charge (Qg) (Max) @ Vgs	3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 100 V

关闭

Inquiry

+86-13723477211

sales@fuchaoic.com