AIMZHN120R120M1TXKSA1 Single FETs, MOSFETs_Electronic components_ Integrated circuit IC_ Semiconductor components_ Equipment procurement_ EIS LIMITED

: 100

$11.1700

$9.5700

$95.7000

240

$7.5100

$1,802.4000

720

$7.0400

$5,068.8000

1200

$6.3400

$7,608.0000

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Product parameters

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TYPE	DESCRIPTION
Mfr	IR (Infineon Technologies)
Series	-
Package	Tube
Product Status	ACTIVE
Package / Case	TO-247-4
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	SiC (Silicon Carbide Junction Transistor)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	22A (Tc)
Rds On (Max) @ Id, Vgs	150mOhm @ 7A, 20V
Power Dissipation (Max)	133W (Tc)
Vgs(th) (Max) @ Id	5.1V @ 2.2mA
Supplier Device Package	PG-TO247-4-14
Grade	Automotive
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Vgs (Max)	+23V, -5V
Drain to Source Voltage (Vdss)	1200 V
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	458 pF @ 800 V
Qualification	AEC-Q101

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